Enhanced hydrogenation due to ultrasound treatment in polycrystalline silicon: new approach to thin film defect engineering

Materials Research Society Symposium - Proceedings

Volumn 378, Issue , 1995, Pages 405-410

  Ostapenko, S ^a   Henley, W ^a   Karimpanakkel, S ^a   Jastrzebski, L ^a   Lagowski, J ^a  

^a UNIVERSITY OF SOUTH FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; ELECTRIC CONDUCTIVITY; GRAIN BOUNDARIES; HYDROGENATION; LEAKAGE CURRENTS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING GLASS; SUBSTRATES; THIN FILM TRANSISTORS; THIN FILMS; ULTRASONIC APPLICATIONS;

DANGLING BONDS; FILM HOMOGENEITY; POLYCRYSTALLINE SILICON; SHEET RESISTIVITY; SURFACE PHOTOVOLTAGE MAPPING; ULTRASOUND TREATMENT;

SEMICONDUCTING SILICON;

EID: 0029538664     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-378-405     Document Type: Conference Paper

References (10)