Scanning tunneling microscopy of undoped GaAs/AlGaAs heterostructures under laser irradiation

Applied Physics Letters

Volumn 68, Issue 4, 1996, Pages 502-504

  Takahashi, T ^a   Yoshita, M ^b   Sakaki, H ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIUM COMPOUNDS; CHARGE CARRIERS; ELECTRIC CURRENTS; ENERGY GAP; FERMI LEVEL; LASER APPLICATIONS; METALLORGANIC VAPOR PHASE EPITAXY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SURFACES;

ALUMINUM GALLIUM ARSENIDE; AMMONIUM SULFIDE; LASER IRRADIATION; LASER POWER; PHOTOCARRIER GENERATION;

HETEROJUNCTIONS;

EID: 0029755846     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116380     Document Type: Article

References (14)

1. G. Binning, H. Rohrer, Ch. Gerber, and E. Weibel, Phys. Rev. Lett. AIP 49, 57 (1982).
2. R. J. Hamers and K. Markert, Phys. Rev. Lett. 64, 1051 (1990); Y. Kuk, R. S. Becker, P. J. Silverman, and G. P. Kochanski, ibid. 65, 456 (1990); J. Vac. Sci. Technol. B 9, 545 (1991); D. G. Cahill and R. J. Hamers, ibid. 9, 564 (1991).
3. D. A. Bonnell, G. S. Rohrer, and R. H. French, J. Vac. Sci. Technol. B AIP 9, 551 (1991).
4. S. Akari, M. Ch. Lux-Steiner, M. Vögt, M. Stachel, and K. Dransfeld, J. Vac. Sci. Technol. B AIP 9, 561 (1991).
5. L. Q. Qian and B. W. Wessels, Appl. Phys. Lett. 58, 1295 (1991); 58, 2538 (1991).
6. L. Arnold, W. Krieger, and H. Walther, Appl. Phys. Lett. 51, 786 (1987); M. Völcker, W. Krieger, T. Suzuki, and H. Walther, J. Vac. Sci. Technol. B 9, 541 (1991); S. Grafström, J. Kowalski, R. Neumann, O. Probst, and M. Wörtge, ibid. 9, 568 (1991).
7. G. F. A. van de Walle, H. van Kempen, P. Wyder, and P. Davidson, Appl. Phys. Lett. AIP 50, 22 (1987).
8. S. Howells, M. J. Gallagher, T. Chen, P. Pax, and D. Sarid, Appl. Phys. Lett. AIP 61, 801 (1992).
9. J. M. Gómez-Rodríguez, A. M. Baró, J. P. Silveira, M. Vázquez, Y. González, and F. Briones, Appl. Phys. Lett. 56, 36 (1990); F. Osaka, I. Tanaka, T. Kato, and Y. Katayama, Jpn. J. Appl. Phys. 27, L1193 (1988); F. Osaka and T. Kato, J. Vac. Sci. Technol. B 11, 1697 (1993).
10. P. Renaud and S. F. Alvarado, Phys. Rev. B AIP 44, 6340 (1991).
11. M. B. Johnson, U. Maier, H.-P. Meier, and H. W. Salemink, Appl. Phys. Lett. AIP 63, 1273 (1993).
12. S. Gwo, K.-J. Chao, A. R. Smith, C. K. Shih, K. Sadra, and B. G. Streetman, J. Vac. Sci. Technol. B AIP 11, 1509 (1993).
13. J. A. Dagata, W. Tseng, J. Bennett, J. Schneir, and H. H. Harary, Appl. Phys. Lett. AIP 59, 3288 (1991).
14. I. Tanaka, T. Kato, S. Ohkouchi, and F. Osaka, J. Vac. Sci. Technol. A AIP 8, 567 (1990).