Silicon wafer specifications and characterization capabilities...another perspective

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 2862, Issue , 1996, Pages 2-9

  Goodall, Randal K ^a  

^a International 300 mm Initiative   (United States)

Author keywords

Metrology; Modeling; Semiconductor; Specification; Standards

Indexed keywords

DEFECTS; FLAT PANEL DISPLAYS; MEASUREMENT; MODELS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR MATERIALS; SPECIFICATIONS; STANDARDS;

MODEL APPROACH; PARTICLE DETECTION; SEMICONDUCTOR INDUSTRY;

SILICON WAFERS;

EID: 0010366369     PISSN: 0277786X     EISSN: 1996756X     Source Type: Conference Proceeding    
DOI: 10.1117/12.256190     Document Type: Conference Paper

References (8)

1. In the semiconductor industry "metrology" often means the measurement of circuit critical dimensions (CD) and pattern overlay precision in microlithography process control. In this paper metrology means the science and practice of measurement in a broad sense.
2. The session was "Flatness, Roughness, and Discrete Defect Characterization for Computer Disks, Wafers, and Flat Panel Displays, " Chaired by John Stover, during the International Symposium on Optical Science, Engineering, and Instrumentation, SPIE Proceedings Volume 2862, August 8-9, (1996).
3. H. R. Huff and R. K. Goodall, "Silicon Materials and Metrology: Critical Concepts for Optimal IC Performance in the Gigabit Era, " in Semiconductor Characterization, Present Status and Future Needs, Eds. W. M. Bullis, D. G. Seiler, A. C. Diebold, AIP Press, pp. 67-96 (1996).
4. The author maintains neither of these positions.
5. National Technology Roadmap for Semiconductors, SIA, 4300 Stevens Creek Blvd., Suite 271, San Jose, CA, (1994). There will be an incremental update to the 1994 Roadmap released in late 1996.
6. R. K. Goodall and H. R. Huff, "Wafer Flatness Modeling for Scanning Steppers, " Integrated Circuit Metrology, Inspection and Process Control X, SPIE, 2725, pp. 76-84, (1996).
7. H. R. Huff, R. K. Goodall, et al., "Measurement of Silicon Particles by Laser Surface Scanning and Angle-Resolved Light Scattering, " Microcontamination '94 Conference Proceedings, pp. 121-131 (1994). An updated version of this paper is to be published by the Electrochemical Society in late 1996.
8. The 1996 update to the Starting Materials portion of the NTRS was used as a test case for a model-based roadmap. The models were not embedded in the update document, but in a number of cases they were used to frame the technical discussions during the working meetings. The effort to develop consensus agreement took on a very different tone, focusing more on the technical literature. Highlighting the inadequacies in the technical literature will likely lead the industry to new ways of solving its strategic technology problems.