Nanofabrication with a novel EB system with a large and stable beam current

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 12 SUPPL. B, 1996, Pages 6421-6425

  Yoshimura, Toshiyuki ^a   Ohta, Hiroya ^a   Yamamoto, Jiro ^a   Uchino, Shou Ichi ^a   Gotoh, Yasushi ^a   Terasawa, Tsuneo ^a  

^a HITACHI LTD   (Japan)

Author keywords

Electron beam lithography; Gate fabrication; Hard mask; Nano edge roughness; Nanofabrication; Overlay accuracy; Resist

Indexed keywords

EID: 0010319850     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.6421     Document Type: Article

References (19)

1. T. Mizuno, M. Iwase, H. Niiyama, T. Shibata, K. Fujisaki, T. Nakasugi, A. Toriumi and Y. Ushiku: VLSI Symp. Tech. Dig. (The Institute of Electrical and Electronic Engineers, Piscataway, New Jersey,1994) p. 13.
2. T. Yoshimura, Y. Nakayama and S. Okazaki: J. Vac. Sci. Technol. B10 (1992) 2615.
3. T. Yoshimura, H. Shiraishi, J. Yamamoto and S. Okazaki: Appl. Phys. Lett. 63 (1993) 764.
4. T. Yoshimura, H. Shiraishi, J. Yamamoto and S. Okazaki: Jpn. J. Appl. Phys. 32 (1993) 6065.
5. H. Shiraishi, T. Yoshimura, T. Sakamizu, T. Ueno and S. Okazaki: J. Vac. Sci. Technol. B12 (1994) 3895.
6. T. Yoshimura, H. Shiraishi and S. Okazaki: Jpn. J. Appl. Phys. 34 (1995) 6786.
7. T. Yoshimura, H. Shiraishi, T. Terasawa and S. Okazaki: to be published in J. Vac. Sci. Technol. B14 (1996).
8. F. Emoto, K. Gamo, S. Namba, N. Samoto and R. Shimizu: Jpn. J. Appl. Phys. 24 (1985) L809.
9. M. A. Gesley, F. J. Hohn, R. G. Viswanathan and A. D. Wilson, J. Vac. Sci. Technol. B6 (1988) 2014.
10. H. Nakazawa, H. Takemura, M. Isobe, Y. Nakagawa, M. H. Shearer and W. Thompson: J. Vac. Sci. Technol. B6 (1988) 2019.
11. Y. Ochiai, M. Baba, H. Watanabe and S. Matsui: Jpn. J. Appl. Phys. 30 (1991) 3266.
12. W. Chen and H. Ahmed: Appl. Phys. Lett. 63 (1993) 1116.
13. K. Kurihara, K. Iwadate, H. Namatsu, M. Nagase, H. Takenaka and K. Murase: Jpn. J. Appl. Phys. 34 (1995) 6940.
14. H. Ohta, T. Matsuzaka and N. Saitou: Proc. SPIE 2437 (1995) 185.
15. N. Saitou, S. Hosoki, M. Okumura, T. Matsuzaka, G. Matsuoka and M. Ohyama: Microelectron. Eng. 5 (1986) 123.
16. H. Namatsu, M. Nagase, K. Kurihara, K. Iwadate, T. Furuta and K. Murase: J. Vac. Sci. Technol. B13 (1995) 1473.
17. J. Yamamoto, S. Uchino, T. Hattori, T. Yoshimura and F. Murai: to be published in Jpn. J. Appl. Phys. 35 (1996).
18. K. Nagata, H. Ohta, T. Morimura, M. Okumura and N. Saitou: Jpn. J. Appl. Phys. 34 (1995) 6639.
19. M. Ono, M. Saito, T. Yoshitomi, C. Fiegna, T. Ohguro and H. Iwai: Int. Electron Devices Meet. Tech. Dig. (The Institute of Electrical and Electronic Engineers, Piscataway, New Jersey, 1993) p. 119.