N channel metal-oxide-semiconductor field-effect transistor with 0.15 μm gate delineated by focused ion beam lithography

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 15, Issue 6, 1997, Pages 2342-2345

  Suzuki, Kohei ^a   Yamashita, Motoji ^a   Kawakami, Nobuyuki ^a   Nakaue, Akimitsu ^a  

^a KOBE STEEL LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0010176884     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589642     Document Type: Article

References (6)

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3. H. Kawano, K. Yoshida, and S. Yamazaki, Jpn. J. Appl. Phys. 19 (1980).
4. K. Suzuki, M. Yamashita, H. Ueda, and A. Nakaue, Jpn. J. Appl. Phys., Part 1 33, 7033 (1994).
5. K. Suzuki, M. Yamashita, N. Kawakami, and A. Nakaue, J. Vac. Sci. Technol. B 14, 3916 (1996).
6. K. Suzuki, M. Yamashita, N. Kawakami, and A. Nakaue, J. Vac. Sci. Technol. B 13, 2593 (1995).