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Applied Surface Science

Volumn 138-139, Issue 1-4, 1999, Pages 199-205

A new process to manufacture thin SiGe and SiGeC epitaxial films on silicon by ion implantation and excimer laser annealing

(3) Boher, Pierre a Stehle, Jean Louis a Fogarassy, E b

a SOPRA (France)

b Faculté de Médecine (France)

Author keywords

Carbon; Epitaxy; Excimer laser; Germanium; Implantation; Silicon

Indexed keywords

EID: 0009722696 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/S0169-4332(98)00399-7 Document Type: Article

Times cited : (8)

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