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Surface Science

Volumn 366, Issue 1, 1996, Pages

Low temperature adsorption of water on cleaved GaAs (110) surfaces

(5) Henrion, O a Loher T a Klein, A a Pettenkofer, C a Jaegermann, W a

a HAHN MEITNER INSTITUT (Germany)

Author keywords

Chemisorption; Gallium arsenide; Photoelectron spectroscopy; Single crystal surfaces

Indexed keywords

ADSORPTION; BINDING ENERGY; CHEMICAL MODIFICATION; DESORPTION; DISSOCIATION; FERMI LEVEL; HEATING; LOW TEMPERATURE PHENOMENA; SEMICONDUCTING GALLIUM ARSENIDE; SURFACES; WATER; X RAY PHOTOELECTRON SPECTROSCOPY;

ELECTRONIC CHANGES; LOW TEMPERATURE ADSORPTION; MOLECULAR ADSORPTION; SINGLE CRYSTAL SURFACES; SYNCHROTRON EXCITED PHOTOELECTRON SPECTROSCOPY;

CHEMISORPTION;

EID: 0030269581 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/0039-6028(96)00886-2 Document Type: Article

Times cited : (22)

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