Bonding structure and characteristics of defects of near-stoichiometric silicon nitride films

Journal of Applied Physics

Volumn 80, Issue 5, 1996, Pages 2896-2903

  Hasegawa, S ^a   Ikeda, M ^a   Inokuma, T ^a   Kurata, Y ^a  

^a KANAZAWA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0008853906     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.363142     Document Type: Article

References (25)

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