Far-infrared intersubband transitions in a two-dimensional GaAs/(Al,Ga)As hole system: Direct comparison of experiment and calculation

Journal of Applied Physics

Volumn 80, Issue 10, 1996, Pages 6058-6060

  Cole, B E ^a   Chamberlain, J M ^a   Henini, M ^a   Nakov, V ^b   Gobsch, G ^b  

^a UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^b ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0008847767     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.363564     Document Type: Article

References (14)

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