Fourier-transform infrared reflection study of the morphology of porous semiconductor structures

Journal of Physics Condensed Matter

Volumn 12, Issue 16, 2000, Pages 3897-3900

  Belogorokhov, A ^a   Pusep, Yu A ^b   Belogorokhova, L ^c  

^a INSTITUTE OF RARE METALS   (Russian Federation)

^b FEDERAL UNIVERSITY OF SÃO CARLOS   (Brazil)

^c MOSCOW STATE UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0008749380     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/12/16/311     Document Type: Article

References (8)

1. Delerue C, Allan G and Lannoo M 1993 Phys. Rev. B 48 11 024
2. Belogorokhov A I, Karavanskii V A, Obraztsov A N and Timoshenko V Yu 1994 JETP Lett. 60 274
3. Tiginyanu I M, Irmner G, Monecke J, Vogt A and Hartnagel H I 1997 Semicond. Sci. Technol. 12 491
4. Canham L T 1990 Appl. Phys. Lett. 57 1046
5. Berreman D W 1963 Phys. Rev. 130 2193
6. Ghiner A V and Surdutovich G I 1994 Phys. Rev. A 50 714
7. Assam R M A and Bashara N M 1977 Ellipsometry and Polarized Light (Amsterdam: North-Holland)
8. Landolt-Börnstein New Series 1987 vol 17a, ed O Madelung and H Schulz (Berlin: Springer)