Comparitive behavior of radiation and thermally generated protons in amorphous SiO2

Journal of Applied Physics

Volumn 89, Issue 4, 2001, Pages 2246-2250

  Devine, R A B ^a  

^a UNIVERSITY OF NEW MEXICO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0008593937     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1339206     Document Type: Article

References (11)

1. D. B. Brown and N. S. Saks, J. Appl. Phys. 70, 3734 (1991).
2. N. S. Saks and R. W. Rendell, Appl. Phys. Lett. 61, 3014 (1992).
3. K. Vanheusden, W. L. Warren, R. A. B. Devine, D. M. Fleetwood, J. R. Schwank, M. R. Shaneyfelt, P. S. Winokur, and Z. J. Lemnios, Nature (London) 386, 587 (1997).
4. W. L. Warren, D. M. Fleetwood, J. R. Schwank, K. Vanheusden, R. A. B. Devine, L. B. Archer, and R. M. Wallace, IEEE Trans. Nucl. Sci. NS-44, 1789 (1997).
5. R. E. Stahlbush, R. K. Lawrence, and H. L. Hughes, IEEE Trans. Nucl. Sci. NS-45, 2398 (1998).
6. K. Vanheusden, R. A. B. Devine, J. R. Schwank, D. M. Fleetwood, R. G. Polcawich, W. L. Warren, S. P. Karna, and R. D. Pugh, IEEE Trans. Nucl. Sci. 44, 2087 (1997).
7. N. F. M. Devine, J. Robertson, V. Girault, and R. A. B. Devine, Phys. Rev. B 61, 15 565 (2000).
8. R. A. B. Devine, unpublished.
9. S. M. Sze, Physics of Semiconductor Devices 2nd edition (Wiley, New York, 1981), Chap. 8.
10. P. J. McWhorter and P. S. Winokur, Appl. Phys. Lett. 48, 133 (1986).
11. F. B. McLean and G. A. Ausman, Jr., Phys. Rev. B 15, 1052 (1977).