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Volumn 16, Issue 3, 1998, Pages 1646-1649

Enhanced Schottky barrier on InGaAs for high performance photodetector application

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPES; BARRIER HEIGHTS; CRACKED STRUCTURES; CURRENT TRANSPORT MECHANISM; CURRENT VOLTAGE; ELECTRICAL PROPERTY; HIGH-PERFORMANCE SEMICONDUCTORS; LOW TEMPERATURES; METAL DEPOSITION; METAL SURFACES; PROCESSING TECHNIQUE; ROOM TEMPERATURE; SCHOTTKY; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY BARRIERS; SCHOTTKY CONTACTS;

EID: 0008363070     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.581135     Document Type: Article
Times cited : (5)

References (14)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.