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Volumn 16, Issue 3, 1998, Pages 1646-1649
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Enhanced Schottky barrier on InGaAs for high performance photodetector application
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Author keywords
[No Author keywords available]
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Indexed keywords
ATOMIC FORCE MICROSCOPES;
BARRIER HEIGHTS;
CRACKED STRUCTURES;
CURRENT TRANSPORT MECHANISM;
CURRENT VOLTAGE;
ELECTRICAL PROPERTY;
HIGH-PERFORMANCE SEMICONDUCTORS;
LOW TEMPERATURES;
METAL DEPOSITION;
METAL SURFACES;
PROCESSING TECHNIQUE;
ROOM TEMPERATURE;
SCHOTTKY;
SCHOTTKY BARRIER HEIGHTS;
SCHOTTKY BARRIERS;
SCHOTTKY CONTACTS;
OPTOELECTRONIC DEVICES;
PHOTODETECTORS;
SCHOTTKY BARRIER DIODES;
SEMICONDUCTING INDIUM;
ELECTRIC PROPERTIES;
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EID: 0008363070
PISSN: 07342101
EISSN: None
Source Type: Journal
DOI: 10.1116/1.581135 Document Type: Article |
Times cited : (5)
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References (14)
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