Pressure behaviour of photoluminescence from InAs submonolayer in GaAs matrix

Journal of Physics Condensed Matter

Volumn 10, Issue 48, 1998, Pages 11111-11120

  Li, G H ^a   Han, H X ^a   Ding, K ^a   Wang, Z P ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0008164170     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/10/48/030     Document Type: Article

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