Hydrogen passivation of dopants in amorphous silicon

Journal of Non-Crystalline Solids

Volumn 198-200, Issue PART 1, 1996, Pages 73-76

  Pietruszko, Stanislaw M ^a   Pachocki, Mariusz ^a   Jang, Jing ^b  

^a WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

^b Kyung Hee University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; BORON; CHEMICAL VAPOR DEPOSITION; DOPING (ADDITIVES); HYDROGEN; HYDROGENATION; ION IMPLANTATION; PASSIVATION; PHOSPHORUS; PYROLYSIS;

DEACTIVATION; HYDROGEN PASSIVATION; LOW PRESSURE CHEMICAL VAPOR DEPOSITION TECHNIQUE;

AMORPHOUS SILICON;

EID: 0030563440     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-3093(95)00661-3     Document Type: Article

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