Influence of the gravity on interface shape during crystal growth of LICAF

Science in China, Series A: Mathematics, Physics, Astronomy

Volumn 43, Issue 4, 2000, Pages 430-438

  Liu, Yongcai ^a,b   Chen, Wanchun ^a,c  

^a INSTITUTE OF PHYSICS   (China)

^b TIANJIN UNIVERSITY   (China)

^c INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

Author keywords

Convection; Finite element method; Horizontal Bridgman; Melt crystal interface

Indexed keywords

EID: 0007620880     PISSN: 10069283     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02897167     Document Type: Article

References (20)

1. Chernov, A.A., Modern Crystallography 3: Crystal Growth, Berlin, New York, Tokyo: Springer-Verlag, 1984, 219-230.
2. Hu Wenrui, Tang Zemei, Excitation mechanism of thermocapillary oscillatory convection, Science in China, Ser. A, 1990, 33(9): 934.
3. Xiong Bin, Hu Wenrui, Influence of low gravity level on crystal growth in floating zone, J. Cryst. Growth, 1993, 133: 155.
4. Laure, P., Roux, B., Ben Hadid, H., Computer simulations of finite plasmas convected across magnetized plasmas, Phys. Fluids A, 1990, 2: 516.
5. Liang, M.C., Lan, C.W., Three-dimensional thermocapillary and buoyancy convections and interface shapes in horizontal Bridgman crystal growth, J. Cryst. Growth, 1997, 180: 787.
6. Roux, B., Hadid, H.B., Numerical simulation of oscillatory convection in semiconductor melts, J. Cryst. Growth, 1989, 97: 201.
7. Brandon, S., Flow fields and interface shapes during horizontal Bridgman growth of fluorides, Modeling Simul. Mater. Sci. Eng., 1997, 5: 321.
8. Alexander, J.I.D., Ouazzani, D., Rosenberger, F., Analysis of the low gravity tolerance of Bridgman-Stockbarger crystal growth, J. Cryst. Growth, 1989, 97: 285.
9. Huo, C., Ge, P., Xu, Z. et al., An analysis of the characteristics of crystal growth from solution under microgravity, J. Cryst. Growth, 1991, 114: 486.
10. Wang, W., Hu, W. R., Concentration distribution in crystallization from solution under microgravity, J. Cryst. Growth, 1996, 160: 398.
11. Kuppurao, S., Brandon, S., Derby, J.J., Modeling the vertical Bridgman growth of cadmium zinc telluride, J. Cryst. Growth, 1995, 155: 93.
12. Liu, Y. C., Brandon, S., Interfacial kinetic model for directional growth of garnets, J. Synthetic Crystals (in Chinese), 1999, 28: 8.
13. Christodoulou, K.N., Scriven, L.E., Discretization of free surface flows and other moving boundary problems, J. comput. Phys., 1992, 99: 39.
14. 6, J. Cryst. Growth, 1991, 109: 334.
15. Welty, J.R., Wicks, C.E., Wilson, R.E., Fundamentals of Momentum, Heat and Mass Transfer, New York: Springer-Verlag, 1984.
16. Goncharov, V.A., Markov, E.V., Numerical study of thermoconvection and dopant transport mechanisms in the process of Si growth by floatin-zone technique under microgravity, J. Cryst. Growth, 1994, 139: 266.
17. Imhoff, D., Riviere, J.P., Zozime, A. et al., Microstructure of high-temperature plastically deformed Zn-doped CdTe: comparison with In-doped GaSb, J. Cryst. Growth, 1993, 130: 627.
18. Witt, A.F., Gatos, H.C., Lichtensteiger, M. et al., Crystal growth and steady state segregation under zero gravity: InSb, J. Electrochem. Soc., 1975, 122: 276.
19. Nishinaga, T., Ge P., Huo, C. et al., Melt growth of striation and etch pit free GaSb under microgravity, J. Cryst. Growth, 1997, 174: 96.
20. Chang, C.J., Brown, R.A., Radial segregation induced by natural convection and melt/solid interface shape in vertical Bridgman growth, J. Cryst. Growth, 1983, 63: 343.