Distortion of atoms around the neutral vacancy in a Si crystal

European Physical Journal B

Volumn 8, Issue 4, 1999, Pages 575-582

  Biernacki, S W ^a,b   Becker, P ^a  

^a PHYSIKALISCH TECHNISCHE BUNDESANSTALT   (Germany)

^b INSTITUTE OF PHYSICS   (Poland)

Author keywords

61.72.Ji pPoint defects (vacancies, interstitials, color centers, etc.) and defect clusters; 71.55.Cn Elemental semiconductors

Indexed keywords

EID: 0007589480     PISSN: 14346028     EISSN: None     Source Type: Journal    
DOI: 10.1007/s100510050724     Document Type: Article

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