CL and EBIC analysis of a p+-InGaAs/n-InGaAs/n-InP/n+-InP heterostructure

Materials Science and Engineering B

Volumn 42, Issue 1-3, 1996, Pages 192-198

  Boudjani, A ^a,b   Sieber, B ^a   Cleton, F ^a,c   Rudra, A ^c  

^a UNIV LILLE   (France)

^b UNIVERSITY OF SIDI BEL ABBES   (Algeria)

^c EPFL   (Switzerland)

Author keywords

Cathodoluminescence; Electron beam induced current; Semiconductors

Indexed keywords

CARRIER CONCENTRATION; CATHODOLUMINESCENCE; CHEMICAL BEAM EPITAXY; DISLOCATIONS (CRYSTALS); ELECTRON BEAMS; ELECTRON DENSITY MEASUREMENT; INDUCED CURRENTS; PHOTONS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING; STRAIN;

DIFFUSION RECOMBINATION (DR) PARAMETERS; DISLOCATION BARRIER; ELECTRON BEAM INDUCED CURRENT (EBIC) TECHNIQUE; MINORITY CARRIER DIFFUSION LENGTH;

HETEROJUNCTIONS;

EID: 0007091878     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(96)01706-0     Document Type: Article

References (26)

1. S.M. Sze, Physics of Semicond. Devices, Wiley, New York, 1981, p. 704.
2. R.U. Martinelli, T.J. Zamerowski and P.A. Longeway, Appl. Phys. Lett., 53 (11) (1988) 989.
3. B.G. Yacobi and D.B. Holt, J. Appl. Phys., 59 (4) (1986) R1.
4. H.J. Leamy, J. Appl. Phys., 53 (1982) R51.
5. B. Sieber, Mater. Sci. Eng., B24 (1994) 35.
6. A. Rudra, J.F. Carlin, P. Ruterana, M. Gailhanov, J.L. Staheli and M. Ilegems, J. Cryst. Growth, 120 (1992) 338.
7. C.J. Wu and D.B. Wittry, J. Appl. Phys., 49 (5) (1978) 2827.
8. Donolato, Phys. Status Solidi A, 65 (1981) 649.
9. S.M. Davidson and C.A. Dimitriadis, J. Microsc., 118 (3) (1980) 275.
10. B. Akamatsu, P. Henoc and R.B. Martins, J. Microsc. Spectrosc. Electron., 14 (1989) 12a.
11. S. Adachi, in P. Bhattacharya (ed.), Properties of Indium Gallium Arsenide, INSPEC Data Reviews Series, no. 8, 1993, p. 86.
12. F. Cleton, Thesis, Université Lille I, France, 1995, p. 97.
13. D. Hahn, O. Jaschinski, H.-H. Wehmann, A. Schlachetzki and M. Von Ortenberg, J. Electron. Mater., 24 (10) (1995) 1357-1361.
14. G.D. Pettit and W.J. Turner, J. Appl. Phys., 36 (1965) 2081.
15. G. Wagner, V. Gottschalch, H. Rhan and P. Paufler, Phys. Status Solidi A, 112 (1989) 519.
16. J.E. Bayley and P.B. Hirsch, Philos. Mag., 5 (1960) 485.
17. R.K. Ham, Philos. Mag., 6 (1961) 1183.
18. I. Adesida, in P. Bhattacharya (ed.), Properties of Indium Gallium Arsenide, INSPEC Data Reviews Series, no. 8, 1993, p. 253.
19. F. Cléton, B. Sieber, L. Isnard, R.A. Masut, J.M. Bonard and J.D. Ganière, Semicond. Sci. Technol., 11 (1996) 726.
20. K. Nakajima, S. Yamazaki, S. Komiya and K. Akita, J. Appl. Phys., 52 (1981) 4575.
21. M. Bugajski and W. Lewandowski, J. Appl. Phys., 57 (1985) 521.
22. M. Müllenborn and N.M. Haegel, J. Appl. Phys., 74 (1993) 5748.
23. B. Akamatsu, P. Henoc and A.C. Papadopoulo, Scan. Electron. Microsc., IV (1983) 1579.
24. V. Badescu and P.T. Landsberg, Semicond. Sci. Technol., 8 (1993) 1267.
25. L.F. Eastman, in P. Bhattacharya (ed.), Properties of Indium Gallium Arsenide, INSPEC Data Reviews Series, no. 8, 1993, p. 103.
26. H.H. Wieder, in P. Bhattacharya (ed.), Properties of Indium Gallium Arsenide, INSPEC Data Reviews Series, no. 8, 1993, p. 137.