Photon recycling as the dominant process of luminescence generation in an electron beam excited n-InP epilayer grown on an n+-InP substrate

Semiconductor Science and Technology

Volumn 11, Issue 5, 1996, Pages 726-734

  Cleton F ^a   Sieber, B ^a   Masut, R A ^b   Isnard, L ^b   Bonard, J M ^c   Ganiere J D ^c  

^a UNIV LILLE   (France)

^b ÉCOLE POLYTECHNIQUE DE MONTRÉAL   (Canada)

^c EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; CRYSTAL STRUCTURE; DIFFUSION; ELECTRON BEAMS; EMISSION SPECTROSCOPY; EPITAXIAL GROWTH; PHOTONS; SEMICONDUCTOR DOPING; SUBSTRATES;

DIFFUSION RECOMBINATION PARAMETER; EXCITATION BEAM ENERGY; LUMINESCENCE GENERATION;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0030144954     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/11/5/013     Document Type: Article

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