GaAlAs-based micromachined accelerometer

High Pressure Research

Volumn 19, Issue 1-6, 2000, Pages 347-351

  Lee, H Y ^a   Letartre, X ^a   Leclercq, J L ^a   Viktorovitch, P ^a   Konczewicz, L ^b   Sadowski, M ^b   Robert, J L ^b  

^a ECOLE CENTRALE DE LYON   (France)

^b UNIVERSITÉ MONTPELLIER 2   (France)

Author keywords

Accelerometer; GaAlAs; Microfabrication; Piezoresistance

Indexed keywords

EID: 0007091843     PISSN: 08957959     EISSN: None     Source Type: Journal    
DOI: 10.1080/08957950008202576     Document Type: Article

References (3)

1. Leclercq, J. L., Ribas, R. P., Karam, J. M. and Victorovitch, P. (1998). "III-V micromachined devices for microsystem", Microelectronics Journal, 29, 613.
2. Robert, J. L., Mosser, V. and Contreras, S. (1991). "Physics of AlGaAs compounds for sensing application", International Conference on Solid-state Sensor and Actuators, pp. 294-299.
3. Ribas, R. P., Leclercq, J. L., Karam, J. M., Courtois, B. and Victorovitch, P., "Bulk micromachining characterization of 0.2 μm HEMT MMIC technology for GaAs MEMS design", LDSD'97, The 2nd International Conference on Low Dimensional Structure and Devices, Lisbon, Portugal, 19-21 May, 1997.