Efficient photoluminescence from triangular quantum wells at the interface of an InP/In0.53Ga0.47As heterostructure

JETP Letters

Volumn 67, Issue 10, 1998, Pages 826-831

  Nolle, E L ^a   Prokhorov, A M ^a  

^a PROKHOROV GENERAL PHYSICS INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0006856615     PISSN: 00213640     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.567756     Document Type: Article

References (6)

1. V. S. Vavilov, É. L. Nolle, and S. N. Maksimovskiǐ, Fiz. Tverd. Tela (Leningrad) 7, 1558 (1965) [Sov. Phys. Solid State 7, 1253 (1965)].
2. A. Yu. Egorov, A. E. Zhukov, P. S. Kop'ev et al., Fiz. Tekh. Poluprovodn. 30, 1345 (1996) [Semiconductors 30, 707 (1996)].
3. W. van Roosbroeck and W. Shockley, Phys. Rev. 94, 1558 (1954).
4. P. K. Bhatacharya, M. V. Rao, and M. J. Tsai, J. Appl. Phys. 54, 5096 (1983).
5. P. W. Yu, C. K. Peng, and H. Morkoc, Appl. Phys. Lett. 54, 1546 (1989).
6. E. Tournie, K. H. Ploog, and C. Albert, Appl. Phys. Lett. 61, 2808 (1992).