Enhanced ultraviolet emission in polysilane light-emitting diodes by inserting a SiOx thin layer

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 4 B, 1999, Pages 2609-2612

  Xu, Yonghua ^a   Fujino, Takahiro ^a   Watase, Seiji ^b   Naito, Hiroyoshi ^a   Oka, Kunio ^a   Dohmaru, Takaaki ^a  

^a Osaka Prefecture University   (Japan)

^b OSAKA MUNICIPAL TECHNICAL RESEARCH INSTITUTE   (Japan)

Author keywords

Light emitting diode; O2 plasma treatment; Poly(methylphenylsilane); Polysilane; SiOx thin layer; Ultraviolet emission

Indexed keywords

EID: 0006832892     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.2609     Document Type: Article

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