Temperature dependence of the electroluminescent characteristics of light-emitting diodes made from poly(methylphenylsilane)

Advanced Materials

Volumn 8, Issue 8, 1996, Pages 657-659

  Suzuki, Hiroyuki ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTROLUMINESCENCE; ENERGY GAP; EXCITONS; LIGHT ABSORPTION; LIGHT EMITTING DIODES; OPTICAL VARIABLES MEASUREMENT; PHOTOLUMINESCENCE; QUANTUM EFFICIENCY; SPECTRUM ANALYSIS; THERMAL EFFECTS; ULTRAVIOLET RADIATION;

CARRIER INJECTION; ELECTRON INJECTING ELECTRODES; POLYMETHYLPHENYLSILANE;

POLYSILANES;

EID: 0030219245     PISSN: 09359648     EISSN: None     Source Type: Journal    
DOI: 10.1002/adma.19960080812     Document Type: Article

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