Growth and resistivity behavior of copper film by chemical vapor deposition

Journal of the Electrochemical Society

Volumn 143, Issue 2, 1996, Pages 624-627

  Choi, E S ^a   Park, S K ^a   Lee, Hong H ^a  

^a Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; ELECTRIC CONDUCTIVITY; FILM GROWTH; FLOW OF FLUIDS; GASES; MASS TRANSFER; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR WEIGHT; SILICA; SURFACES; TEMPERATURE; TITANIUM NITRIDE;

CARRIER GAS FLOW RATE; GROWTH RATE; SELECTIVE DEPOSITION;

METALLIC FILMS;

EID: 0030083002     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1836490     Document Type: Article

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