Collector-up SiGe heterojunction bipolar transistors

IEEE Transactions on Electron Devices

Volumn 46, Issue 7, 1999, Pages 1510-1513

  Gruhle, Andreas ^a   Kibbel, Horst ^a   Mähner, Claus ^b   Mroczek, Werner ^b  

^a DAIMLER AG   (Germany)

^b Vishay   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COLLECTOR-UP CONFIGURATION;

MOLECULAR BEAM EPITAXY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0032630622     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.772503     Document Type: Article

References (8)

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3. max up to 120 GHz," in IEDM Tech. Dig., 1994, pp. 377-380.
4. E. F. Crabbé, B. S. Meyerson, J. M. C. Stork, and D. L. Harame, "Vertical profile optimization of very high frequency epitaxial Si- and SiGe-base bipolar transistors," in IEDM Tech. Dig., 1993, pp. 83-86.
5. J. N. Burghartz, K. A. Jenkins, D. A. Grützmacher, T. O. Sedgewick, and C. L. Stanis, "High-performance emitter-up/down SiGe HBT's," IEEE Electron Device Lett., vol. 15, pp. 360-362, 1994.
6. A. Gruhle, "The influence of EB-junction design on collector saturation current, ideality factor, early voltage and device switching speed of SiGe HBT's," IEEE Trans. Electron Devices, vol. 41, pp. 198-203, 1994.
7. C. Mähner, W. Mroczek, A. Gruhle, and H. Kibbel, "SiGe heterojunction bipolar transistors in collector-up configuration," in Proc. ESSDERC'98, pp. 136-140.
8. A. Gruhle and C. Mähner, "Low 1/f noise SiGe HBT's with application to low phase noise microwave oscillators," Electron. Lett., vol. 33, no. 24, pp. 2050-2052, 1997.