Reliability analysis of GaAs/AlGaAs HBT's under forward current/temperature stress

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 1990, Pages 329-332

  Hafizi, M E ^a   Pawlowicz, L M ^a   Tran, L T ^a   Umemoto, D K ^a   Streit, D C ^a   Oki, A K ^a   Kim, M E ^a   Yen, K H ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONTACTS, OHMIC--DEGRADATION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

ALUMINUM GALLIUM ARSENIDE; DC DEVICES; FORWARD BIAS STRESS; TEMPERATURE STRESSES;

TRANSISTORS, BIPOLAR;

EID: 0025496743     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)