Step-free surface grown on GaAs (111)B substrate by selective area metalorganic vapor phase epitaxy

Applied Physics Letters

Volumn 69, Issue 17, 1996, Pages 2549-2550

  Nishida, Toshio ^a   Kobayashi, Naoki ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0005949221     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117735     Document Type: Article

References (11)

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