Charging effects in the alternating-current conductance of a double-barrier resonant tunnelling structure

Journal of Physics Condensed Matter

Volumn 10, Issue 40, 1998, Pages 9015-9027

  Anantram, M P ^a  

^a NASA AMES RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0005675641     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/10/40/008     Document Type: Article

References (19)

1. Buot F A 1993 Phys. Rep. 234 73 (see section 4)
2. Frensley W R 1988 Superlatt. Microstruct. 4 497
3. Buot F A and Rajagopal A K 1993 Phys. Rev. B 48 17 217
4. Jacoboni C and Price P J 1990 Solid State Commun. 75 193
5. Liu H C 1991 Phys. Rev. B 43 12 538
6. Chen L Y and Ting C S 1990 Phys. Rev. Lett. 64 3159
7. Fu Y and Dudley S C 1993 Phys. Rev. Lett. 70 65
8. Landauer R 1992 Phys. Scr. T 42 110
9. Büttiker M, Pretre A and Thomas H 1993 Phys. Rev. Lett. 70 4114
10. Büttiker M, Thomas H and Pretre A 1993 Phys. Lett. 180A 364
11. Büttiker M 1993 J. Phys.: Condens. Matter 5 9361
12. Anantram M P and Datta S 1994 Phys. Rev. B 51 7632
13. Christen T and Büttiker M 1996 Phys. Rev. B 53 2064 This reference includes the important effect of dephasing in the ac conductance using voltage probes.
14. Sheard F W and Toombs G A 1988 Appl. Phys. Lett. 52 1228
15. Datta S 1995 Electronic Transport in Mesoscopic Systems (Cambridge: Cambridge University Press)
16. 1(t).
17. Mahan G D 1991 Many Particle Physics 2nd edn (New York: Plenum)
18. Lake R, Klimeck G and Datta S 1993 Phys. Rev. B 47 6427
19. The position of the resonance is not calculated self-consistently here, as we only want to illustrate the effect of changing the capacitances.