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Volumn 53, Issue 4, 1996, Pages 2064-2072

Low-frequency admittance of quantized Hall conductors

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[No Author keywords available]

Indexed keywords


EID: 0000195604     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.53.2064     Document Type: Article
Times cited : (83)

References (31)
  • 3
    • 0027540160 scopus 로고
    • Semiconductors and Semimetals, Vol. 35, edited by M. Reed (Academic, Boston, 1992)
    • For reviews see R. J. Haug, Semicond. Sci. Technol. 8, 131 (1993); Semiconductors and Semimetals, Vol. 35, edited by M. Reed (Academic, Boston, 1992).
    • (1993) Semicond. Sci. Technol. , vol.8 , pp. 131
    • Haug, R.1
  • 21
    • 0000802327 scopus 로고
    • For the fractional quantized Hall effect a widely discussed alternative description of edge states is based on chiral Luttinger liquids [see X. G. Wen, Phys. Rev. B 43, 11025 (1991)]. This approach neglects electrostatic restructuring but can be used to discuss the role of contacts [see C. L. Kane and M. P. A. Fisher (unpublished)].
    • (1991) Phys. Rev. B , vol.43 , pp. 11025
    • Wen, X.1
  • 28
    • 0000222221 scopus 로고
    • B. J. van Wees et. al Phys. Rev. B 43, 12431 (1991).
    • (1991) Phys. Rev. B , vol.43 , pp. 12431


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