Radiative emission properties of a-SiN : H based nanometric multilayers for light emitting devices

Journal of Luminescence

Volumn 80, Issue 1-4, 1998, Pages 423-427

  Giorgis, F ^a   Pirri, C F ^a   Vinegoni, C ^b   Pavesi, L ^b  

^a POLITECNICO DI TORINO   (Italy)

^b UNIVERSITY OF TRENTO   (Italy)

Author keywords

Amorphous silicon based alloy; Electroluminescence; Multilayer; Photoluminescence

Indexed keywords

EID: 0005478581     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-2313(98)00141-0     Document Type: Article

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