Evidence of internal electric fields in by scanning capacitance and near-field scanning optical microscopy

Physical Review B - Condensed Matter and Materials Physics

Volumn 56, Issue 3, 1997, Pages 1472-1478

  Leong, J K ^a   Williams, C ^a   Olson, J ^b  

^a UNIVERSITY OF UTAH   (United States)

^b NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0005355237     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.56.1472     Document Type: Article

References (22)

1. G. B. Stringfellow and G. S. Chen, J. Vac. Sci. Technol. B 9, 2182 (1991).
2. A. Gomyo, T. Suzuki, and S. Iijima, Phys. Rev. Lett. 60, 2645 (1988).
3. A. Gomyo, T. Suzuki, K. Kobayashi, S. Kawata, I. Hino, and T. Yuasa, Appl. Phys. Lett. 50, 673 (1988).
4. M. Kondow, H. Kakibayashi, S. Minagawa, Y. Inoue, T. Nishino, and Y. Hamakawa, J. Cryst. Growth 93, 412 (1988).
5. M. C. DeLong, P. C. Taylor, and J. M. Olson, Appl. Phys. Lett. 57, 620 (1990).
6. T. Suzuki, A. Gomko, S. Iijima, K. Kobayashi, S. Kawata, I. Hino, and T. Yuasa, Jpn. J. Appl. Phys. 27, 2098 (1988).
7. S. R. Kurtz, J. M. Olson, and A. E. Kibbler, Appl. Phys. Lett. 57, 1922 (1990).
8. M. E. Raikh and E. V. Tsiper, Phys. Rev. B 49, 2509 (1994).
9. P. Bellon, J. P. Chevalier, G. P. Martin, E. Dupont-Nivet, C. Thiebaut, and J. P. Andre, Appl. Phys. Lett. 52, 567 (1988).
10. D. J. Friedman, J. G. Zhu, A. E. Kibbler, J. M. Olson, and J. Moreland, Appl. Phys. Lett. 63, 1774 (1993).
11. D. J. Friedman, G. S. Horner, Sarah R. Kurtz, K. A. Bertness, J. M. Olson, and J. Moreland, Appl. Phys. Lett. 65, 878 (1994).
12. J-K. Leong, C. C. Williams, J. M. Olson, and S. Froyen, Appl. Phys. Lett. 69, 4081 (1996).
13. P. Bellon, J. P. Chevalier, E. Augarde, J. P. Andre, and G. P. Martin, J. Appl. Phys. 66, 2388 (1989).
14. T. Suzuki, A. Gomyo, and S. Iijima, J. Cryst. Growth 93, 396 (1988).
15. J-K. Leong, J. McMurray, C. C. Williams, and G. B. Stringfellow, J. Vac. Sci. Technol. B 14, 3113 (1996).
16. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981), Chap. 7.
17. E. Betzig and J. K. Trautman, Science 257, 189 (1992).
18. J.-K. Leong and C. C. Williams, Appl. Phys. Lett. 66, 1432 (1995).
19. R. G. Alonso, A. Mascarenhas, G. S. Horner, K. Sinha, J. Zhu, D. J. Friedman, K. A. Bertness, and J. M. Olson, Solid State Commun. 88, 341 (1993).
20. S. Froyen, A. Zunger, and A. Mascarenhas, Appl. Phys. Lett. 68, 2852 (1996).
21. M. Kondo, C. Anayama, N. Okada, H. Sekiguchi, K. Domen, and T. Tanahashi, J. Appl. Phys. 76, 914 (1994).
22. T. Y. Wang, L. S. Heath, and W. Stutius, Appl. Phys. Lett. 63, 755 (1993).