Healing processes in submicron Al interconnects after electromigration failure

Applied Physics Letters

Volumn 70, Issue 19, 1997, Pages 2541-2543

  Hunt, A W ^a,b   Riege, S P ^a,c   Prybyla, J A ^a  

^a LUCENT TECHNOLOGIES   (United States)

^b HARVARD UNIVERSITY   (United States)

^c MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0005339342     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118914     Document Type: Article

References (9)

1. Reviews: (a) C. K. Hu, K. P. Rodbell, T. D. Sullivan, K. Y. Lee, and D. P. Bouldin, IBM J. Res. Develop. 39, 465 (1995); (b) R. Kirchheim, Mater. Res. Soc. Symp. Proc. 309, 101 (1993).
2. Reviews: (a) C. K. Hu, K. P. Rodbell, T. D. Sullivan, K. Y. Lee, and D. P. Bouldin, IBM J. Res. Develop. 39, 465 (1995); (b) R. Kirchheim, Mater. Res. Soc. Symp. Proc. 309, 101 (1993).
3. S. P. Riege, A. W. Hunt, and J. A. Prybyla (unpublished).
4. (a) C. Y. Chang and R. W. Vook, Mater. Res. Soc. Symp. Proc. 225, 125 (1991);
5. (b) C. Y. Chang and R. W. Vook, Thin Solid Films 223, 23 (1993);
6. (c) W. C. Shin and A. L. Greer, Mater. Res. Soc. Symp. Proc. 356, 417 (1995);
7. (d) H. Okabayashi, M. Komatsu, and H. Mori, Appl. Phys. Lett. 68, 1066 (1996).
8. We note that the Al islands, which develop and grow in voided regions, do so in the absence (as well as in the presence) of the electron beam in the TEM.
9. Different crystallographic orientations of failure-site segments would then result in some void sites having a greater amount of Al-island growth than others, as observed.