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Volumn 2884, Issue , 1996, Pages 323-332

Mask fabrication rules for proximity-corrected patterns

Author keywords

[No Author keywords available]

Indexed keywords

FUNCTIONS;

EID: 0005084973     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.262815     Document Type: Conference Paper
Times cited : (10)

References (3)
  • 2
    • 0029223306 scopus 로고
    • Reduction of ASIC Gate-level line-end shortening by Mask Compensation
    • J.Garofalo, J.DeMarco, J.Bailey, J.Xiao, S.Vaidya, "Reduction of ASIC Gate-level line-end shortening by Mask Compensation," Proc. SPIE 2440, 171, (1995).
    • (1995) Proc. SPIE , vol.2440 , pp. 171
    • Garofalo, J.1    DeMarco, J.2    Bailey, J.3    Xiao, J.4    Vaidya, S.5
  • 3
    • 57949094604 scopus 로고    scopus 로고
    • Practical Limitations to OPC Structure Dictated by Die-to-Database Inspection
    • D.Van Den Broeke, "Practical Limitations to OPC Structure Dictated by Die-to-Database Inspection," Advanced Reticle Symposium (1996).
    • (1996) Advanced Reticle Symposium
    • Van Den Broeke, D.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.