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Volumn 36, Issue 3 SUPPL. B, 1997, Pages 1368-1373

Local atomic bonding in fluorinated silicon oxides: Bond-ionicity-controlled contributions of infrared-active vibrations to the static dielectric constant

Author keywords

Chemical stability; Infrared active vibrations; Infrared effective charges; Low dielectric constant materials; Si F bond stretching vibrations; Si O bond stretching vibrations; Si O F alloys

Indexed keywords


EID: 0005012715     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.1368     Document Type: Article
Times cited : (11)

References (12)
  • 7
    • 0001866033 scopus 로고
    • eds. G. Lucovsky, S. T. Pantelides and F. L. Galeener Pergamon Press, New York
    • A. G. Revesz and G. V. Gibbs: The Physics of MOS Insulators, eds. G. Lucovsky, S. T. Pantelides and F. L. Galeener (Pergamon Press, New York, 1980) p. 92.
    • (1980) The Physics of MOS Insulators , pp. 92
    • Revesz, A.G.1    Gibbs, G.V.2
  • 12


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.