Origin of the anomalous pulse-width dependence in capacitance transient measurements on n-type a-Si:H

Journal of Non-Crystalline Solids

Volumn 198-200, Issue PART 1, 1996, Pages 517-520

  Jackson, W B ^a   Johnson, N M ^a  

^a PALO ALTO RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; DEFECTS; ELECTRIC FIELD EFFECTS; OHMIC CONTACTS; RELAXATION PROCESSES; TRANSIENTS;

ANOMALOUS PULSE WIDTH DEPENDENCE; CURRENT INJECTION; HYDROGENATED AMORPHOUS SILICON;

AMORPHOUS SILICON;

EID: 0030563549     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-3093(95)00747-4     Document Type: Article

References (8)

1. J.D. Cohen, T.M. Leon and R. Rasmussen, Phys. Rev. Lett. 69 (1992) 3358.
2. J.D. Cohen, T.M. Leen, F. Zhong and R.J. Rasmussen, Mater. Res. Soc. Symp. Proc. 297 (1993) 183.
3. U.W. Pachen, D. Kwon and J.D. Cohen, Mater. Res. Soc. Symp. Proc. 336 (1994) 455.
4. M.W. Carlen, Y. Xu and R.S. Crandall, Phys. Rev. B51 (1995) 2173.
5. H.M. Branz and E.A. Schiff, Phys. Rev. B48 (1993) 8667.
6. W.B. Jackson, N.M. Johnson and J. Walker, Mater. Res. Soc. Symp. Proc. 337 (1995) 233.
7. W.B. Jackson and N.M. Johnson, Phys. Rev. B52 (1995) R2233.
8. D.V. Lang, in: Thermally Stimulated Relaxation in Solids, ed. P. Braunlich, Top. Appl. Phys., Vol. 37 (Springer, Berlin, 1979) ch. 3.