Data retention prediction for modern floating gate non-volatile memories

Microelectronics Reliability

Volumn 40, Issue 8-10, 2000, Pages 1561-1566

  Tao, G ^a   Scarpa, A ^a   Dijkstra, J ^a   Stidl, W ^a,b   Kuper, F ^a  

^a NXP SEMICONDUCTORS   (Netherlands)

^b PHILIPS RESEARCH LABORATORIES   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0004945093     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(00)00171-2     Document Type: Article

References (9)

1. K. Naruke, et al., IEDM Tech. Dig. 1988, pp 424.
2. G. Tao, et al, Microelectronic Engineering 48 (1999), pp419-422.
3. G. Tempel et al, Non-Volatile Semiconductor Memory Workshop 2000, pp105-107.
4. S. Kamohara et al., IRPS 1998, pp 57.
5. P. Hesto, in Instabilities in silicon devices G. Barbottin and A. Vapaille ed.
6. H. Kameyama, et.al: IEEE IRPS 2000, pp 194-199
7. C. de Graaf, et al., NVSMW 1998, pp 68
8. See, f.i.: Satoh et al., IEEE trans. ED Vol 45, No 2, 1998, pp482-486.
9. A. Scarpa, et al., abstract submitted to IRW 2000.