Electron beam induced current characterization of novel GaAs quantum nanostructures based on potential modulation of two-dimensional electron gas by Schottky in-plane gates

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 12 SUPPL. B, 1996, Pages 6652-6658

  Kasai, Seiya ^a   Hashizume, Tamotsu ^a   Hasegawa, Hideki ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

Electric field profile; Electron beam induced current (EBIC); Lateral superlattice; Multi dot chain; Quantum nanostructure; Quantum wire; Schottky in plane gate (IPG)

Indexed keywords

EID: 0004923219     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.6652     Document Type: Article

References (12)

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