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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 2 SUPPL. B, 1996, Pages 1340-1347

Fabrication and characterization of novel lateral surface superlattice structure utilizing Schottky barrier height control by doped silicon interface control layers

(2) Kasai, Seiya a Hasegawa, Hideki a

a HOKKAIDO UNIVERSITY (Japan)

Author keywords

Conductance oscillation; Electron beam induced current; Lateral surface superlattice; Schottky barrier; Si interface control layer

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CURRENT MEASUREMENT; ELECTRONS; FIELD EFFECT TRANSISTORS; INDUCED CURRENTS; LIGHT MODULATION; OSCILLATIONS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SURFACES; TRANSCONDUCTANCE; VOLTAGE MEASUREMENT;

CONDUCTANCE OSCILLATION; CURRENT VOLTAGE MEASUREMENT; DRAIN CONDUCTANCE; ELECTRON BEAM INDUCED CURRENT MEASUREMENT; LATERAL SURFACE SUPERLATTICE; SCHOTTKY BARRIER HEIGHT CONTROL; TWO DIMENSIONAL ELECTRON GAS;

SEMICONDUCTOR SUPERLATTICES;

EID: 0030079523 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.35.1340 Document Type: Article

Times cited : (4)

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