Anomalous temperature dependence of the Hall mobility in undoped bulk GaAs

Journal of Applied Physics

Volumn 82, Issue 8, 1997, Pages 3832-3835

  Siegel, W ^a   Schulte, S ^a   Reichel, C ^a   Kuhnel G ^a   Monecke, J ^a  

^a TU BERGAKADEMIE FREIBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0004726295     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.365747     Document Type: Article

References (14)

1. W. Walukiewicz, L. Wang, L. M. Pawlowicz, J. Lagowski, and H. C. Gatos, J. Appl. Phys. 59, 3144 (1986).
2. Z. G. Wang, Y. J. Dai, C. J. Li, H. P. Lu, Z. Y. Deng, S. K. Wan, S. X. Xu, M. F. Shun, H. Shun, and L. Y. Lin, in Semi-Insulating III-V Materials, Ixtapa, Mexico, 1992, edited by C. J. Miner, W. Ford, and E. R. Weber (IOP, Bristol, 1993), p. 279.
3. Y. Nakamura, Y. Ohtsuki, and T. Kikuta, Mater. Sci. Forum 38-41, 929 (1989).
4. M. L. Young, D. A. O. Hope, and M. R. Brozel, Semicond. Sci. Technol. 3, 292 (1988).
5. W. Siegel and G. Kühnel, in Semi-Insulating III-V Materials, Warsaw, Poland, 1994, edited by M. Godlewski (World Scientific, Singapore, 1994), p. 193.
6. K. Kaminaka, H. Morishita, M. Kiyama, A. Kawasaki, M. Yokogawa, K. Fujita, and S. Akai, in Semi-Insulating III-V Materials, Ixtapa, Mexico, 1992, edited by C. J. Miner, W. Ford, and E. R. Weber (IOP, Bristol, 1993), p. 307.
7. M. Müllenborn, H. CH. Alt, and A. Heberle, J. Appl. Phys. 69, 4310 (1991).
8. W. Siegel, G. Kühnel, J. R. Niklas, M. Jurisch, and B. Hofmann, Semicond. Sci. Technol. 11, 851 (1996).
9. W. Siegel, J. Monecke, S. Schulte, and G. Kühnel, J. Appl. Phys. 81, 3155 (1997).
10. W. Siegel, G. Kühnel, and U. Kretzer, Mater. Sci. Eng. B 28, 84 (1994).
11. M. Müller, G. Gärtner, G. Hirt, M. Jurisch, A. Köhler, G. Müller, and B. Weinert, J. Cryst. Growth 166, 636 (1996).
12. H. Ch. Alt, Semicond. Sci. Technol. 6, B121 (1991).
13. J. C. Maxwell-Garnett, Philos. Trans. R. Soc. London, Ser. A 203, 385 (1904).
14. W. Siegel, G. Kühnel, H. A. Schneider, H. Witte, and T. Flade, J. Appl. Phys. 69, 2245 (1991).