GaAs/AlGaAs/InGaAs vertical triple barrier single electron transistors

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 3 SUPPL. B, 1997, Pages 1667-1671

  Austing, David Guy ^a   Honda, Takashi ^a   Tarucha, Seigo ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

Conductance oscillations; Coulomb blockade; GaAs; Quantum dot; Single electron transistor; Triple barrier structure; Weak coupling

Indexed keywords

EID: 0004379352     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.1667     Document Type: Article

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