Defect formation and annealing behavior of InP implanted by low-energy 15N ions

Journal of Applied Physics

Volumn 83, Issue 2, 1998, Pages 738-746

  Rauhala, E ^a   Ahlgren, T ^a   Vakevainen K ^a   Raisanen J ^a   Keinonen, J ^a   Saarinen, K ^b   Laine, T ^b   Likonen, J ^c  

^a UNIVERSITY OF HELSINKI   (Finland)

^b AALTO UNIVERSITY   (Finland)

^c VTT TECHNICAL RESEARCH CENTRE OF FINLAND   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0004009086     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.366746     Document Type: Article

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