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Volumn 2000-January, Issue , 2000, Pages 73-79

GLACIER: A hot carrier gate level circuit characterization and simulation system for VLSI design

Author keywords

[No Author keywords available]

Indexed keywords

DESIGN; HOT CARRIERS; INTEGRATED CIRCUIT DESIGN; INTEGRATED CIRCUIT MANUFACTURE; VLSI CIRCUITS;

EID: 0003894724     PISSN: 19483287     EISSN: 19483295     Source Type: Conference Proceeding    
DOI: 10.1109/ISQED.2000.838857     Document Type: Conference Paper
Times cited : (20)

References (16)
  • 1
    • 84945713471 scopus 로고
    • Hot-electron-induced MOSFET degradation: Model, monitor, and improvement
    • C. Hu, S. Tam, F. Hsu, P. Ko, T. Chan, and K. Terrill, "Hot-Electron-Induced MOSFET Degradation: Model, Monitor, and Improvement", IEEE Trans. Electron Devices, Vol. 32, No. 2, pp. 375, 1985
    • (1985) IEEE Trans. Electron Devices , vol.32 , Issue.2 , pp. 375
    • Hu, C.1    Tam, S.2    Hsu, F.3    Ko, P.4    Chan, T.5    Terrill, K.6
  • 2
    • 0020733451 scopus 로고
    • An empirical model for device degradation due to hot-carrier injection
    • E. Taketa, and N. Suzuki, "An Empirical Model for Device Degradation due to Hot-carrier Injection", IEEE Electron Device Letters, Vol. 4, No. 11, pp. 111, 1983
    • (1983) IEEE Electron Device Letters , vol.4 , Issue.11 , pp. 111
    • Taketa, E.1    Suzuki, N.2
  • 3
    • 0027202869 scopus 로고
    • AC versus DC hot-carrier degradation in n-channel MOSFET's
    • K. Mistry, and B. Doyle, "AC versus DC Hot-Carrier Degradation in n-channel MOSFET's", IEEE Trans. Electron Device, Vol. 40, No. 1, pp. 96, 1993
    • (1993) IEEE Trans. Electron Device , vol.40 , Issue.1 , pp. 96
    • Mistry, K.1    Doyle, B.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.