Radiation effects on light sources and detectors

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 541, Issue , 1985, Pages 138-149

  Barnes, C E ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

IONIZING RADIATION; LIGHT SOURCES; MILITARY APPLICATIONS; OPTICAL MATERIALS; OPTOELECTRONIC DEVICES;

LIGHT OUTPUT DEGRADATION; OPTOELECTRONIC SYSTEMS; PERMANENT DAMAGE; RADIATION EXPOSURE;

RADIATION EFFECTS;

EID: 0003707716     PISSN: 0277786X     EISSN: 1996756X     Source Type: Conference Proceeding    
DOI: 10.1117/12.975365     Document Type: Conference Paper

References (15)

1. C. E. Barnes and J. J. Wiczer, “Radiation Effects in Optoelectronic Devices”, Sandia National Laboratories Report Number SAND-84-0771, Albuquerque, NM, May, 1984.
2. C. E. Barnes, “Radiation Effects in Pigtailed GaAs and GaAlAs LEDs”, Air Force Wright Aeronautical Laboratories Report Number AFWAL-TR-81-1086, Wright Patterson AFB, Ohio, June, 1981.
3. C. E. Barnes and K. J. Soda, “Application of Damage Constants in Gamma Irradiated Amphoterically Si Doped GaAs LEDs”, IEEE Trans. Nuc. NS-23, 1664 (1976).
4. L. W. Aukerman, M. F. Millea, and M. McColl, “Effects of Radiation Damage on the Behavior of GaAs pn Junctions”, IEEE Trans. Nuc. Sci. NS-13, no. 6, 194 (1976).
5. R. A. Polimadei, S. Share, A. S. Epstein, R. J. Lynch and D. Sullivan, “Performance of GaAlAs Light Emitting Diodes in Radiation Environments”, IEEE Trans. Nuc. Sci. NS-21, no. 6, 96 (1974).
6. A. G. Stanley, “Comparison of Light-Emitting Diodes in a Space Radiation Environment”, IEEE Trans. Nuc. Sci. NS-17, no. 6, 239 (1970).
7. G. W. ‘t Hooft and C. van Opdorp, “Analysis of LED Degradation; Proton-Bombarded GaAs”, Solid State Elect. 27, 253 (1984).
8. C. E. Barnes, “Development of Efficient, Radiation-Insensitive GaAs:Zn LEDs”, IEEE Trans. Nuc. Sci. NS-24, 2309 (2977).
9. C. E. Barnes, “Increased Radiation Hardness of GaAs Laser Diodes at High Current Densities”, J. Appl. Phys. 45, 3485 (1974).
10. N. G. Basov, Yu. A. Drozhbin, Yu. P. Zakharov, V. V. Nikitin, A. S. Semenov, B. M. Stepanov, A. M. Toimachev and V. A. Yakovlev, “Effect on Injection Current on the Time Dependence of the Emission from GaAs Lasers”, Sov. Phys. - Solid State 8, 2254 (1967).
11. C. E. Barnes, “Neutron Damage in GaAs Laser Diodes: At and Above Laser Threshold”, IEEE Trans. Nuc. Sci. NS-19, no. 6, 382 (1972).
12. C. E. Barnes, “The Effect of Neutron Irradiation on the High Temperature Operation of Injection Laser Diodes”, Proc. SPIE 506, 218 (1984).
13. J. J. Wiczer, C. E. Barnes, T. A. Fischer, L. R. Dawson and T. E. Zipperian, “AlGaAs/GaAs Radiation Hardened Photodiodes”, Proc. SPIE 506, 224 (1984).
14. J. J. Wiczer, L. R. Dawson, G. C. Osbourn and C. E. Barnes, “Direct Bandgap, Ionizing-Radiation Insensitive, Photodiode Structures”, Proc. SPIE 296, 95 (1981).
15. J. J. Wiczer, T. A. Fischer, L. R. Dawson, G. C. Osbourn, T. E. Zipperian and C. E. Barnes, “Pulsed Irradiation of Optimized, MBE Grown, A1GaAs/GaAs Radiation Hardened Photodiodes”, IEEE Trans. Nuc. Sci. NS-31, 1477 (1984).