Development of efficient, radiation-insensitive GaAs:Zn LEDs

IEEE Transactions on Nuclear Science

Volumn 24, Issue 6, 1977, Pages 2309-2314

  Barnes, C E ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

RADIATION-HARDENED SEMICONDUCTOR DEVICES;

SEMICONDUCTOR DIODES, LIGHT EMITTING;

EID: 0017631380     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1977.4329213     Document Type: Article

References (10)

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3. A. G. Stanley, IEEE Trans. Nucl. Sci. NS-17, no. 6, 239 (1970).
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5. S. Share, A. S. Epstein, and. R. A. Polimader., IEEE Trans. Nucl. Sci. NS-20, no. 6, 256 (1973).
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7. N. E. Byer J. Appl. Phys. 41, 1602 (1970).
8. L. W. Aukerman, M. F. Millea, and M. McColl, IEEE Trans. Nucl. Sci. NS-13, no. 6, 174 (1966).
9. See, for example, p. 99 in Physics of semiconductors, S. M. Sze, Wiley Interscience, New York (1969).
10. E. G. Dierschke, Proc. Soc. Photo-Optical Instr. Eng. 63, 90 (1975).