InGaN/GaN lasers grown on SiC

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3284, Issue , 1998, Pages 82-93

  Doverspike, K ^a   Bulman, G E ^a   Sheppard, S T ^a   Kong, H S ^a   Leonard, M ^a   Dieringer, H ^a   Edmond, J ^a   More, K L ^a   Song, Y K ^a   Kuball, M ^a   Nurmikko, A ^a  

^a Arkansas Power Electronics International Inc   (United States)

Author keywords

Conducting buffer; InGaN; Lasers; LEDs; SiC

Indexed keywords

CURRENT DENSITY; GALLIUM NITRIDE; HETEROJUNCTIONS; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; QUANTUM EFFICIENCY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SILICON CARBIDE; SINGLE CRYSTALS; SUBSTRATES; THIN FILMS;

SEPARATE CONFINEMENT HETEROSTRUCTURE (SCH);

SEMICONDUCTOR LASERS;

EID: 0003546261     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.304434     Document Type: Conference Paper

References (9)

1. Gallium nitride and related materials
2. Room temperature continuous wave operation of InGaN MQW structure laser diodes
3. Gain spectroscopy of InGaN/GaN quantum well diodes
4. Measurements and calculation of spontaneous recombination current and optical gain in GaAs/AlGaAs quantum-well structures