Low phase noise 10ghz dro with low 1/f noise sige hbts

1998 28th European Microwave Conference, EuMC 1998

Volumn 1, Issue , 1998, Pages 391-394

  Gruhle, A ^a   Mahner, C ^b   Weidmann, K ^c  

^a DAIMLER AG   (Germany)

^b Vishay   (United States)

^c AIRBUS GROUP INNOVATIONS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CUTOFF FREQUENCY; DIELECTRIC DEVICES; HETEROJUNCTION BIPOLAR TRANSISTORS; MICROWAVE OSCILLATORS; PHASE NOISE;

1/F NOISE; DIELECTRIC RESONATOR OSCILLATORS; LOW PHASE NOISE; LOW-FREQUENCY NOISE; MEASUREMENT SETUP; RESOLUTION LIMITS; SIGE HBTS; SILICON-BASED DEVICES;

THERMAL NOISE;

EID: 0003388609     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EUMA.1998.338020     Document Type: Conference Paper

References (6)

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2. A. Schuppen, U. Erben, A. Gruhle, H. Kibbel, H. Schumacher, Enhanced SiGe Heteroj unction Bipolar Transistors with 160GHz fmax, IEDM95, 743-746, (1995)
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6. B. v. Haaren, M. Regis, 0. LLopis, L. Escotte, A. Gruhle, C. Mafhner, R. Plana, J. Graffeuil, Low-frequency Noise Properties of SiGe HBTs and Appplications to Ultra Low Phase Noise Oscillators, IEEE Microw. Theory and Techn., MTT-46, 647-652,(1998)