Dynamic images of plasma processes: Use of Fourier blobs for endpoint detection during plasma etching of patterned wafers

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 16, Issue 3, 1998, Pages 1449-1453

  Rietman, Edward A ^a   Lee, John Tseng Chung ^a   Layadi, Nace ^b  

^a LUCENT TECHNOLOGIES   (United States)

^b NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CLOSED CURVE; CONTACT ETCH PROCESS; DYNAMIC IMAGES; END POINT DETECTION; FOURIER; FUNCTION OF TIME; PATTERNED WAFERS; PLASMA PROCESS; POLAR COORDINATE; POLY-SI GATES; PROCESS PARAMETERS; RF-POWER; TIME STEP;

FOURIER ANALYSIS; FOURIER SERIES; HARMONIC ANALYSIS; PLASMA ETCHING; PLASMAS; POLYSILICON;

SILICON WAFERS;

EID: 0003173396     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.581167     Document Type: Article

References (5)

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