Reliable fluorinated thin gate oxides prepared by liquid phase deposition following rapid thermal process

IEEE Electron Device Letters

Volumn 17, Issue 4, 1996, Pages 172-174

  Lu, Wei Shin ^a,b   Hwu, Jenn Gwo ^a,b  

^a IEEE

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITORS; DEPOSITION; ELECTRIC BREAKDOWN; FLUORINE; GATES (TRANSISTOR); HARDNESS; OXIDATION; OXIDES; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING FILMS; SILICA;

FLUORINATED THIN GATE OXIDES; LIQUID PHASE DEPOSITION; NITRIDATION; RADIATION HARDNESS; RAPID THERMAL OXIDATION;

MOSFET DEVICES;

EID: 0030130022     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.485164     Document Type: Article

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