In-plane transport properties of heavily δ-doped GaAs n-i-p-i superlattices: Metal-insulator transition, weak and strong localization

Physical Review B - Condensed Matter and Materials Physics

Volumn 54, Issue 19, 1996, Pages 13980-13995

  Schmidt, T ^a   Müller, St G ^a   Gulden, K ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0002941972     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.54.13980     Document Type: Article

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