Doping of (211) B mercury cadmium telluride

Journal of Crystal Growth

Volumn 159, Issue 1-4, 1996, Pages 1136-1140

  Wijewarnasuriya, P S ^a   Faurie, J P ^a   Sivananthan, S ^a  

^a UNIVERSITY OF ILLINOIS AT CHICAGO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; COMPOSITION; ELECTRIC PROPERTIES; ELECTRON ENERGY LEVELS; ELECTRON TRANSPORT PROPERTIES; ELECTROOPTICAL EFFECTS; EPITAXIAL GROWTH; HALL EFFECT; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

DOPING LEVEL; MERCURY CADMIUM TELLURIDE; MINORITY CARRIER LIFETIMES; PLANAR DOPING; SHOCKLY READ RECOMBINATION CENTERS;

SEMICONDUCTING CADMIUM COMPOUNDS;

EID: 0030562518     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00877-2     Document Type: Article

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