MOCVD of Al2O3 films using new dialkylaluminum acetylacetonate precursors: Growth kinetics and process yields

Chemical Vapor Deposition

Volumn 7, Issue 2, 2001, Pages 69-74

  Battiston, Giovanni A ^a   Carta, Giovanni ^a   Cavinato, Gianni ^b   Gerbasi, Rosalba ^a   Porchia, Marina ^a   Rossetto, Gilberto ^a  

^a CNR   (Italy)

^b UNIVERSITY OF PADOVA   (Italy)

Author keywords

Alumina; FTIR; MOCVD; Thin films

Indexed keywords

EID: 0002615254     PISSN: 09481907     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-3862(200103)7:2<69::AID-CVDE69>3.0.CO;2-Q     Document Type: Article

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